离子注入半导体的快速热退火与SOI技术

自1977年以来,为了摸索离子注入半导体的新退火方法,各国学者进行了大量的研究工作。这种努力是从激光退火的研究开始的。激光与半导体材料相互作用的研究,已派生出若干很有生命力的应用项目,其中,快速热退火、SOI(Semiconductor on Insulator)技术等已显示了重要的应用前景,并正在走向实用化。     

Pulsed KrF excimer laser annealing of silicon solar cell

The pulsed KrF excimer laser annealing of silicon films for solar cell with EBEP-CVD and LP-CVD was studied theoretically and experimentally. Three-dimensional thermal diffusion equation for microcrystalline and amorphous silicon was solved by using the finite difference methods. The results of our heat-flow simulation of laser re-crystallization in a laser irradiation with 50 ns pulse duration almost agree with the experimental results in re-crystallization depth of 0.7 μm for microcrystalline silicon (EBEP-CVD) and 0.4 μm for amorphous silicon (LP-CVD) in a single pulse excimer laser annealing.     

Pd-Ge contact to n-GaAs with the TiW diffusion barrier

Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10⁻⁶ Ω-cm² for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρ_c increasing to 2.94 × 10⁻⁶Ω-cm² and for an aging at 410°C for 40 h with its ρ_c increasing to 1.38 × 10⁻⁵ Ω-cm².     

BST薄膜电容器的制备及其调谐性能研究

利用氩离子束溅射技术在SiO2/Si衬底上淀积Ba0.8Sr0.2TiO3(BST)薄膜,该薄膜在氧气气氛中500℃退火处理30 min,然后利用集成电路平面工艺将薄膜制作成叉指结构电容器。X-射线衍射仪(XRD)和扫描电镜(SEM)分析表明,BST薄膜具有钙钛矿结构,薄膜表面光滑,晶粒致密且分布均匀。调谐性能测试结果表明,该电容器具有较高的电容调谐率,在室温100 kHz频率下,对于2 V的直流偏压,其调谐率和损耗因子分别为62%和0.02。这说明具有此结构的BST薄膜电容器可望应用于微波集成电路。     

Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.     

Effect of Annealing on the Surface Microstructure of Y-Ba-Cu-O Superconducting Ceramics

Precusors to the YBa₂Cu₃O_7-δ material were prepared by both the oxalate precipitation method and conventional ceramic processing. Second-phase grains were observed to develop on the exposed fracture surface during annealing at 500° to 600°C in an ambient atmosphere. The second-phase grains were identified to be BaCO₃ using EDX and XRD. The liquid phase, which was formed because of local chemical inhomogeneity in the Y-Ba-Cu-O system, contributed to the formation of second-phase grains as a source of Ba.     

基于EDA虚拟实验室仿真精确度优化算法的研究

描述了一种减少仿真时所需计算次数的新技术,使得产品的优化可通过参数的变化来实现,并介绍一种改进SA的算法对获得的结果进行优化。     

基于模拟试验法的离散公差稳健设计

 在分析计算机辅助公差设计技术的研究现状的基础上，提出了基于模拟试验法的离散公差稳健设计方法．在该方法中将加工成本与质量损失作为两个独立的目标函数，从而建立离散公差优化设计模型，采用试验设计法和CP方法相结合的技术实现公差的稳健设计，最后用实例证明该方法的可行性．     

退火炉保护气氛的安全控制

钟罩室退火护采用微压氢气作为保护气体，炉内压力的监控是保证安全生产不可忽视的必要手段，该文针对该公司选用的国产钟罩式退火护作了简要介绍，对国产钟罩式退火炉压力监控系统作了分析，指出了存在的缺陷，提出了改进措施。     

整体炉外热处理法对移动烟罩实施消应力退火

为了解决武钢三炼钢厂烟罩这类大型构件不便于在常规热处理炉内进行热处理的难题，根据有关工艺和标准要求对烟罩实施了整体炉外热处理，施工中采用在烟罩中段外部包扎保温材料，同时在烟罩两端搭设简易炉体的方法对烟罩进行保温，并制定相应的热处理施工工艺，对工件进行消除应力退火。退火后进行的应力测试表明，应用此种退火技术，工件的焊接残余应力的下降率可以达到60％以上，完全可以满足大型工件的消应力退火要求。